Understanding Semiconductor Devices

Description

Ideal for undergraduate and beginning graduate students in electrical engineering, Understanding Semiconductor Devices provides a solid grounding in both fundamental principles and practical skills. The text features intuitive explanations and a motivating "electronics-to-physics" approach that progresses from basic to more abstract concepts. It includes intriguing and diverse problems, review questions, and worked out examples.

· Part I: The Fundamentals introduces students to essential material (semiconductor theory, diodes, MOSFETs, and BJTs) without assuming extensive prerequisite knowledge.
· Part II: Advanced Topics covers the specifics of deep submicron MOSFET, photonic, microwave, and power devices and introduces advanced technologies, device reliability, and quantum mechanics.

Bridging the gap between theory and practice, Understanding Semiconductor Devices incorporates the "nuts and bolts" of SPICE (models and parameters) and provides links between theoretical principles and real-life issues like reliability and device parameter measurement.

Table of Contents

Preface
PART 1: THE FUNDAMENTALS
1. Resistors: Introduction to Semiconductors
1.1. The Basics: Resistor Structure and Drift Current
1.2. Insight Into Conducitivity Ingredients: Chemical-Bond Model
1.3. Making a Semiconductor Resistor: Lithography and Diffusion
1.4. Carrier Mobility
1.5. Energy-Band Model
2. Capacitors: Reverse-Biased P-N Junction and MOS Structure
2.1. Basic Applications
2.2. Reverse-Biased P-N Junction
2.3. C-V Dependence of the Reverse-Biased P-N Junction: Solving the Poisson Equation
2.4. SPICE Parameters and Their Measurement
2.5. Metal Oxide Semiconductor (MOS) Capacitor and Thermal Oxide
3. Diodes: Forward-Biased P-N Junction and Metal-Semiconductor Contact
3.1. Rectifying Diodes: Fundamental Effects and Models
3.2. SPICE Models and Parameters, Stored-Charge Capacitance, and Temperature Effects
3.3. Reference Diodes: Breakdown Phenomena
3.4. Schottky Diodes: Metal-Semiconductor Contact
4. Basics of Transistor Applications
4.1. Analog Circuits
4.2. Digital Circuits
5. MOSFET
5.1. MOSFET Principles
5.2. MOSFET Technologies
5.3. MOSFET Modeling
5.4. SPICE Parameters and Parasitic Elements
6. BJT
6.1. BJT Principles
6.2. Bipolar IC Technologies
6.3. BJT Modeling
6.4. SPICE Parameters
6.5. Parasitic Elements Not Included in Device Models
PART 2: ADVANCED TOPICS
7. Advanced and Specific IC Devices and Technologies
7.1. Deep Submicron MOSFET
7.2. Memory Devices
7.3. Silicon-on-Insulator (SOI) Technology
7.4. BICMOS Technology
8. Photonic Devices
8.1. Light-Emitting Diodes (LED): Carrier Recombination
8.2. Photodetectors and Solar Cells: External Carrier Generation
8.3. Lasers
9. Microwave FETs and Diodes
9.1. Gallium-Arsenide versus Silicon
9.2. JFET
9.3. MESFET
9.4. HEMT
9.5. Negative Resistance Diodes
10. Power Devices
10.1. Power Devices in Switch-Mode Power Circuits
10.2. Power Diodes
10.3. Power MOSFET
10.4. IGBT
10.5. Thyristor
11. Semiconductor Device Reliability
11.1. Basic Reliability Concepts
11.2. Failure Mechanisms
11.3. Reliability Screening
11.4. Reliability Measurement
12. Quantum Mechanics
12.1. Wave Function
12.2. Heisenberg Uncertainty Principle
12.3. Schr:odinger Equation
Appendices
A. Basic Integrated Circuit Concepts and Economics
B. Crystal Lattices, Planes, and Directions
C. Hall Effect and Summary of Kinetic Phenomena
D. Summary of Equations and Key Points
E. Contents of Computer Exercises Manual
List of Selected Symbols
Bibliography
Answers to Selected Problems
Index