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Published: 13 September 2012

752 Pages | 500 line illustrations


ISBN: 9780199829835

Bookseller Code (AG)

This text is published by OUP Higher Education Division

Sample Material

Operation and Modeling of the MOS Transistor, Third Edtion International Edition

Third Edition

Yannis Tsividis and Colin McAndrew

  • Unified, careful treatment, starting from basic physical principles and explaining MOS transistor phenomena in a logical and systematic fashion, supplemented with extensive intuitive discussions
  • In-depth coverage of the development of many important models—ranging from the simple to the sophisticated—clearly identifying the connections between them, and encompassing many aspects of modeling, including dc, small-signal, large-signal transient, quasi-static operation, non-quasi-static operation, and noise
  • A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
  • Extensively updated bibliography
  • An accompanying website includes additional details not covered in the text, as well as model computer code

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